Radiatively controlled lifetimes in AlxGa1−xAs grown by metalorganic vapor phase epitaxy
نویسندگان
چکیده
منابع مشابه
Cubic GaN Light Emitting Diode Grown by Metalorganic Vapor-Phase Epitaxy
Manuscript received September 27, 1999. Manuscript revised October 20, 1999. † The authors are with NTT Cyber Space Laboratories, Musashino-shi, 180-8585 Japan. a) E-mail: [email protected] SUMMARY We studied Si and Mg doping characteristics in cubic GaN and fabricated a light emitting diode of cubic GaN on a GaAs substrate by metalorganic vapor-phase epitaxy. The diode structure con...
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Superlattices of cubic gallium nitride (GaN) and gallium arsenide (GaAs) were grown on GaAs(1 0 0) substrates using metalorganic vapor phase epitaxy (MOVPE) with dimethylhydrazine (DMHy) as nitrogen source. Structures grown at low temperatures with varying layer thicknesses were characterized using high resolution X-ray diffraction and atomic force microscopy. Several growth modes of GaAs on Ga...
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Carbon doped AlInAs layers grown by low pressure metalorganic vapor phase epitaxy are investigated as a function of growth temperature. Photoluminescence spectra show a signi cant drop in peak intensity as the growth temperature is reduced, due to the incorporation of non-radiative defects. It is shown that the C doping is not related to the deterioration of the optical properties of the layers...
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Thermodynamic analysis of III-V semiconductor alloys grown by metalorganic vapor phase epitaxy Toshihiro Asai and David S. Dandy Dept. of Chemical Engineering, Colorado State University, Fort Collins, Colorado 80523-1370 A thermodynamic analysis has been applied to systematically study III-V semiconductor alloy deposition, including nitrides grown by metalorganic vapor phase epitaxy. The predic...
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Self-assembled InGaN quantum dots (QDs) have been grown using metalorganic vapor-phase epitaxy (MOVPE), without using antisurfactant. Using 120 s annealing, InGaN QDs have been successfully formed with a circular base diameter of 40 nm and an average height of 4 nm, with QDs density of 4 10 cm . The InGaN QDs have peak photoluminescence (PL) wavelengths of 519 and 509 nm for samples without and...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1994
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.111865